View IRF7476PBF_4106694.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 95279
IRF7476PBF
HEXFET(R) Power MOSFET
Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. l Lead-Free Benefits
l l l
VDSS
12V
RDS(on) max
8.0mW@VGS = 4.5V
ID
15A
S S S G
1
8 7
A A D D D D
2
3
6
4
5
Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current
Top View
SO-8
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
12 12 15 12 120 2.5 1.6 0.02 -55 to + 150
Units
V V A W W W/C C
Thermal Resistance
Symbol
RJL RJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
--- ---
Max.
20 50
Units
C/W
Notes through are on page 8
www.irf.com
1
04/05/06
IRF7476PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 12 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 0.6 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.014 6.0 12 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 8.0 VGS = 4.5V, ID = 15A m 30 VGS = 2.8V, ID = 12A 1.9 V VDS = VGS, ID = 250A 100 VDS = 9.6V, VGS = 0V A 250 VDS = 9.6V, VGS = 0V, TJ = 125C 200 VGS = 12V nA -200 VGS = -12V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 31 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 26 4.6 11 17 11 29 19 8.3 2550 2190 450 Max. Units Conditions --- S VDS = 6.0V, ID = 12A 40 I D = 12A --- nC VDS = 10V --- VGS = 4.5V --- VGS = 0V, VDS = 5.0V --- VDD = 6.0V --- ID = 12A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 6.0V --- pF = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
160 12
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- 0.87 0.73 55 59 54 60 2.5 A 120 1.2 --- 82 89 81 90 V ns nC ns nC
VSD trr Qrr trr Qrr
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 12A, VGS = 0V TJ = 125C, IS = 12A, VGS = 0V TJ = 25C, IF = 12A, VR=12V di/dt = 100A/s TJ = 125C, IF = 12A, VR=12V di/dt = 100A/s
2
www.irf.com
IRF7476PBF
1000
TOP
VGS
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
10
10V 8.0V 5.0V 4.5V 3.5V 2.7V 2.0V BOTTOM 1.5V
100
10
VGS 10V 8.0V 5.0V 4.5V 3.5V 2.7V 2.0V BOTTOM 1.5V
TOP
1
1
0.1
1.5V
1.5V
0.01
0.1
20s PULSE WIDTH Tj = 25C
0.001 0.1 1 10 100 0.01 0.1 1
20s PULSE WIDTH Tj = 150C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
2.0
I D = 15A
ID, Drain-to-Source Current ()
10.00
(Normalized)
T J = 150C
RDS(on) , Drain-to-Source On Resistance
100.00
1.5
1.0
1.00
T J = 25C VDS = 10V 20s PULSE WIDTH
0.5
0.10 1.5 2.0 2.5 3.0 3.5 4.0
V GS = 4.5V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
Tj, Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRF7476PBF
100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C SHORTED gs ds Crss = C gd Coss = Cds + Cgd 10000
VGS , Gate-to-Source Voltage (V)
6
I D = 12A VDS = 9.6V VDS = 6V VDS = 2.4V
5
C, Capacitance(pF)
4
Ciss Coss
1000
3
2
Crss
100 1 10 100
1
0 0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100
ID, Drain-to-Source Current (A)
100 100sec 10 1msec 10msec 1 Tc = 25C Tj = 150C Single Pulse 0.1 0 1 10 100
I SD , Reverse Drain Current (A)
10
T J = 150
C
TJ = 25 C
1
V GS = 0 V
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRF7476PBF
15
VDS
12
RD
VGS RG
D.U.T.
+
ID , Drain Current (A)
-V DD
9
4.5V
6
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
3
VDS 90%
0 25 50 75 100 125 150
T ,Tc, Case Temperature (C) Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
(Z thJA )
D = 0.50
10
0.20 0.10
Thermal Response
0.05 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.1 0.0001 0.001 0.01 0.1 1 t1/ t 2 +T A 100 1000 t2
0.02 1 0.01
J = P DM x Z thJA
10
t 1, Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRF7476PBF
RDS (on) , Drain-to-Source On Resistance (m)
7.5
RDS(on) , Drain-to -Source On Resistance (m)
15.00
13.00
7.3
7.0
VGS = 4.5V
11.00
9.00
6.8
7.00
ID = 15A
6.5 0 20 40 60 80 100 120 ID , Drain Current (A)
5.00 2.0 4.0 6.0 8.0 10.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
400
VG
VGS
3mA
TOP
Charge
IG ID
BOTTOM
ID 5.4A 9.6A 12A
Fig 13a&b. Basic Gate Charge Test Circuit and Waveform
EAS , Single Pulse Avalanche Energy (mJ)
A
Current Sampling Resistors
300
200
15V
100
V(BR)DSS tp
VDS L
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
0 25 50 75 100 125 150
I AS
tp
0.01
Starting Tj, Junction Temperature (C)
Fig 14a&b. Unclamped Inductive Test circuit and Waveforms
Fig 14c. Maximum Avalanche Energy Vs. Drain Current
6
www.irf.com
IRF7476PBF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
9DH 6 6 i DI8C@T HDI H6Y $"! # " &$ '( #(& %'' (' ! (' (%' $&# HDGGDH@U@ST HDI H6Y "$ "" ( #' "' &$ !$ $ !$ $ #
9 6 ' & ! % " $
7
% @
$ #
C !$Ab dA
p
6
9 @ r r C F G
$AA76TD8 !$AA76TD8 !!'# (( % A !## (% $ A'
!&AA76TD8 %"$AA76TD8 $' !$ # A %! $ !& A'
%Y
r
r
6
FAA#$ 8 Ab#dA 'YAG & 'YAp
'YAi !$Ab dA
6 867
APPUQSDIU
IPU@T) AA9DH@ITDPIDIBAEAUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S "AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STAbDI8C@Td #AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AHT !66 $AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A $Ab%d %AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A!$Ab d &AAA9DH@ITDPIADTAUC@AG@IBUCAPAAG@69AAPSATPG9@SDIBAUP AAAAA6ATV7TUS6U@
'YA&!Ab!'d
%#%Ab!$$d
"YA !&Ab$d
'YA &'Ab&d
SO-8 Part Marking Information
@Y6HQG@)AUCDTADTA6IADSA& AHPTA@U 96U@A8P9@AXX QA2A9DTBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S
DIU@SI6UDPI6G S@8UDAD@S GPBP
;;;; )
www.irf.com
7
IRF7476PBF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25C, L = 2.3mH
RG = 25, IAS = 12A.
Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/2006
8
www.irf.com

▲Up To Search▲

Price & Availability of IRF7476PBF

	To Download IRF7476PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .